Pustaka Ilmiah Universitas Padjadjaran

Abstrak

Subsurface Channeling Of KeV Ions Between Graphene Layers: Molecular Dynamics Simulation

Using molecular dynamics simulation, we study the impact of 3 keV Xe ions at glancing incidence on a ß-SiC (111) surface covered by graphene. On top of a full graphene layer covering the substrate, we add a graphene half-layer; the step forming where the half-layer terminates allows the entrance of glancing-incidence ions into a subsurface channel between graphene layers. We find a high channeling probability which leads to only little sputtering and damage formation. Typically, vacancy defects are formed at periodic intervals when the ion hits the uppermost graphene layer from below. Extended damage occurs when the ion hits the step edge itself. There we find several kinds of defects varying from adatoms over the formation of sp1-bonded chains to hillocks.