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Subsurface And Interface Channeling Of keV Ions In Graphene/SiC
Subsurface And Interface Channeling Of keV Ions In Graphene/SiC
Yudi Rosandi, Herbert M. Urbassek
Universitas Padjadjaran, Nuclear Instruments and Methods in Physics Research B 340 (2014) 5–10, journal homepage: www.elsevier.com/locate/nimb, https://dx.doi.org/10.1016/j.nimb.2014.07.031
Bahasa Inggris
Universitas Padjadjaran, Nuclear Instruments and Methods in Physics Research B 340 (2014) 5–10, journal homepage: www.elsevier.com/locate/nimb, https://dx.doi.org/10.1016/j.nimb.2014.07.031
Channeling, Defect formation, Graphene, Silicon carbide, Sputtering
Yudi Rosandi, Herbert M. Urbassek
Universitas Padjadjaran, Nuclear Instruments and Methods in Physics Research B 340 (2014) 5–10, journal homepage: www.elsevier.com/locate/nimb, https://dx.doi.org/10.1016/j.nimb.2014.07.031
Bahasa Inggris
Universitas Padjadjaran, Nuclear Instruments and Methods in Physics Research B 340 (2014) 5–10, journal homepage: www.elsevier.com/locate/nimb, https://dx.doi.org/10.1016/j.nimb.2014.07.031
Channeling, Defect formation, Graphene, Silicon carbide, Sputtering
Using molecular-dynamics simulation, we study the impact of 3 keV Ar and Xe ions on a B-SiC (111) surface covered by a single graphene layer. At glancing ion incidence angles, we observe the ions to undergo interface channeling between the graphene and the first SiC surface layer. This behavior is particularly pronounced for Xe ions, where at incidence angles of 70–75 more than 50% of the ions are channeled. This process is accompanied by abundant damage production and sputtering in the graphene layer. Similarities and differences to subsurface channeling in elemental materials are discussed.
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