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Sputtering Of Dimers Off A Silicon Surface

Sputtering Of Dimers Off A Silicon Surface
Maureen L. Nietiadi, Yudi Rosandi, Michael Kopnarski, Herbert M. Urbassek
Universitas Padjadjaran, Nuclear Instruments and Methods in Physics Research B 289 (2012) 97–99, Publisher Elsevier B.V. journal homepage: www.elsevier.com/locate/nimb, http://dx.doi.org/10.1016/j.nimb.2012.07.037
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Universitas Padjadjaran, Nuclear Instruments and Methods in Physics Research B 289 (2012) 97–99, Publisher Elsevier B.V. journal homepage: www.elsevier.com/locate/nimb, http://dx.doi.org/10.1016/j.nimb.2012.07.037
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We present experimental and molecular-dynamics simulation results of the sputtering of a Si surface by 2 keV Ar ions. Results on both the monomer and dimer distributions are presented. In simulation, these distributions follow a generalized Thompson law with power exponent n ¼ 2 and n ¼ 3, respectively. The experimental data, obtained via plasma post-ionization in an SNMS (secondary neutral mass spectrometry) apparatus, show good agreement with respect to the dimer fraction, and the relative energy distributions of dimers and monomers. The consequences for the dimer sputtering mechanism are discussed.

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