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Step-edge Sputtering Through Grazing Incidence Ions Investigated By Scanning Tunneling Microscopy And Molecular Dynamics Simulations

Step-edge Sputtering Through Grazing Incidence Ions Investigated By Scanning Tunneling Microscopy And Molecular Dynamics Simulations
Alex Redinger, Yudi Rosandi, Herbert M. Urbassek, Thomas Michely
Universitas Padjadjaran, Physical Review B 77, 195436 2008, DOI: 10.1103/PhysRevB.77.195436
Bahasa Inggris
Universitas Padjadjaran, Physical Review B 77, 195436 2008, DOI: 10.1103/PhysRevB.77.195436

Scanning tunneling microscopy is used to quantify step-edge sputtering of Pt (111) at 550 K by grazing incidence ion bombardment with 5 keV Ar+ ions. For bombardment conditions causing negligible erosion on terraces, damage features associated with step bombardment allow us to visualize step retraction and thus to quantify the step-edge sputtering yield. An alternative method for step-edge yield determination, which is applicable under more general conditions, is the analysis of the concentration of ascending steps together with the removed amount as a function of ion ?uence. Interestingly, the azimuthal direction of the impinging ions with respect to the surface signi?cantly changes the sputtering yield at step edges. This change is attributed to the orientation dependence of subsurface channeling. Atomistic insight into step-edge sputtering and its azimuthal dependence is given by molecular dynamics simulations of ion impacts at 0 and 550 K. The simulations also demonstrate a strong dependence of the step-edge sputtering yield on temperature.

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